Semiconductor device and semiconductor device manufacturing method

ABSTRACT

A semiconductor device includes a substrate that includes a first insulating layer, a conductive layer on the first insulating layer, a second insulating layer on the conductive layer, and an opening that passes through the conductive layer and the second insulating layer and in which part of the conductive layer is exposed, a conductive material that contacts at least the first insulating layer and the part of the conductive layer in the opening, and a semiconductor chip that has an electrode extending towards the first insulating layer within the opening and contacting the conductive material.

This application is based upon and claims the benefit of priority fromJapanese Patent Application No. 2020-019933, filed Feb. 7, 2020, theentire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a semiconductor deviceand a semiconductor device manufacturing method.

BACKGROUND

As a method of flip-chip bonding for connecting a semiconductor chip toan interconnection board, a mass reflow approach and athermo-compression bonding approach are known. In the flip-chip bondingbased on the thermo-compression bonding, when the semiconductor chip ismounted on the interconnection board, a solder is melted by heat, andbumps on the semiconductor chip are connected to pads of theinterconnection board by thermo-compression bonding.

The interconnection board used in such a thermocompression bondingapproach has an opening in a solder resist in each bump connectionregion, and part of an interconnection or the pads are exposed withinthe openings. Thus, in this connection region, a level (height)difference is present between the solder resist and the substrate (e.g.,prepreg) on which the solder resist is disposed. As a result, voidsoften remain within the connection region or around each bump at a timeof supplying an NCP (Non-Conductive Paste). Such voids disadvantageouslycause a short circuit failure between adjacent bumps, poor adhesivenessof the NCP resin, or a deterioration in reliability.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of a semiconductor device according toa first embodiment.

FIG. 2 is an enlarged cross-sectional view of a frame B1 shown in FIG.1.

FIG. 3 is a plan view showing a positional relationship among a solderresist layer, an opening, an interconnection layer, and an electrodepillar.

FIG. 4-15 depict aspects of a semiconductor device manufacturing methodaccording to a first embodiment.

FIG. 16 is an enlarged cross-sectional view of a connection portionbetween a semiconductor chip and an interconnection board according to asecond embodiment.

FIG. 17 is a plan view showing a positional relationship among a solderresist layer, an opening, an interconnection layer, and an electrodepillar according to a second embodiment.

FIG. 18 is an enlarged cross-sectional view of a connection portionbetween a semiconductor chip and an interconnection board according to athird embodiment.

FIG. 19 is an enlarged cross-sectional view of a connection portionbetween a semiconductor chip and an interconnection board according to afourth embodiment.

DETAILED DESCRIPTION

Embodiments provide a semiconductor device and a semiconductor devicemanufacturing method capable of preventing generation of voids in aconnection region during flip-chip bonding.

In general, according to one embodiment, a semiconductor device includesa substrate that includes a first insulating layer, a conductive layeron the first insulating layer, and a second insulating layer on theconductive layer. The substrate further includes an opening that passesthrough the conductive layer and the second insulating layer and inwhich part of the conductive layer is exposed. The semiconductor deviceincludes a conductive material that contacts at least the firstinsulating layer and the part of the conductive layer in the opening.The semiconductor device further includes a semiconductor chip that hasan electrode extending towards the first insulating layer within theopening and contacting the conductive material.

Certain example embodiments according to the present disclosure will bedescribed hereinafter with reference to the drawings. The exampleembodiments are not intended to limit the present disclosure. In thefollowing, a vertical direction of an interconnection board or asubstrate indicates a relative direction when a surface of theinterconnection board on which semiconductor chips are mounted is anupper surface, and the vertical direction sometimes differs from adirection of the acceleration of gravity. The drawings are eitherschematic or conceptual and dimensional ratios of elements and the likeare not necessarily identical to actual ones. In the specification andthe drawings, similar elements to those already described with referenceto previous drawings are denoted by the same reference signs, anddetailed description thereof is omitted as appropriate.

First Embodiment

FIG. 1 is a cross-sectional view of a semiconductor device according 1according to a first embodiment. The semiconductor device 1 includes aninterconnection board 10 (also referred to as a substrate in somecontexts), semiconductor chips 20, 30, 31, 31, and 33, adhesive layers40, 41, 42, and 43, a spacer chip 50, an adhesive layer 60, a metalmaterial 70, a resin layer 80, a bonding wire 90, and an encapsulationresin 91. The semiconductor device 1 is, for example, a NAND flashmemory package.

The interconnection board 10 may be a printed circuit board or aninterposer including interconnection layers 11 (which may be referred toas conductive layers in some contexts) and an insulating layer 15. Forexample, a low resistance metal, such as copper, nickel, or an alloythereof, is used for the interconnection layers 11. For example, aninsulating material such as a glass epoxy resin is used for theinsulating layer 15. In FIG. 1, the interconnection layers 11 areprovided only on a front surface and a rear surface of the insulatinglayer 15. However, the interconnection board 10 may have a multilayerinterconnection structure in which a plurality of interconnection layers11 and a plurality of insulating layers 15 are stacked. Theinterconnection board 10 may have through vias 12 passing through theinterconnection board 10 like, for example, an interposer.

A solder resist layer 14 is provided on the front surface of theinterconnection board 10 and the interconnection layer 11. The solderresist layer 14 is an insulating layer for protecting theinterconnection layer 11 from the metal material 70 and preventing ashort circuit failure. Openings OP are provided in the solder resistlayer 14. A part of the interconnection layer 11 and the insulatinglayer 15 are exposed in each opening OP.

The solder resist layer 14 is also provided on the rear surface of theinterconnection board 10. Metal bumps 13 are provided on theinterconnection layer 11 exposed from the solder resist layer 14. Themetal bumps 13 are provided for electrically connecting other componentsto the interconnection board 10.

The semiconductor chip 20 is, for example, a controller chip thatcontrols a memory chip. Semiconductor elements, not shown, are providedon a front surface of the semiconductor chip 20. The semiconductorelements may be, for example, CMOS (Complementary Metal OxideSemiconductor) circuits that configures controller. Electrode pillars 21electrically connected to the semiconductor elements are provided on arear surface of the semiconductor chip 20. For example, a low resistancemetal, such as copper, nickel, or an alloy thereof, is used for theelectrode pillars 21.

Each electrode pillar 21 is inserted into each opening OP of theinterconnection board 10, and a lower end portion of the electrodepillar 21 is disposed at a lower position than a position of an upperend of the opening OP. The metal material 70 is provided around theelectrode pillar 21. The electrode pillar 21 is electrically connectedto the interconnection layer 11 exposed in the opening OP via the metalmaterial 70.

The metal material 70 is filled in each opening OP of theinterconnection board 10, and covers the interconnection layer 11exposed within the opening OP. For example, a low resistance metal, suchas a solder, silver, and copper, is used for the metal material 70. Asdescribed later, the metal material 70 is supplied as a liquid or pastemetal material and then formed by being cured. The metal material coversthe interconnection layer 11 of the interconnection board 10 within eachopening OP and also covers a side surface of each electrode pillar 21 ofthe semiconductor chip 20. The metal material 70 can therebyelectrically connect the electrode pillar 21 of the semiconductor chip20 to the interconnection layer 11 of the interconnection board 10. Theelectrode pillar 21 is apart from the interconnection layer 11 and notin direct contact with the interconnection layer 11. That is, the metalmaterial 70 is interposed between the electrode pillar 21 and theinterconnection layer 11.

A resin layer 80 (also referred to as underfill resin in some contexts)is provided around the semiconductor chip and between the semiconductorchip 20 and the interconnection board 10. The resin layer 80 is formedby, for example, curing an NCP (Non-Conductive Paste), and coverssurroundings of the semiconductor chip 20 to protect the semiconductorchip 20.

The semiconductor chip 30 is adhesively bonded onto the semiconductorchip 20 via the adhesive layer 40. The semiconductor chip 30 is, forexample, a memory chip including a NAND flash memory. The semiconductorchip 30 has semiconductor elements on a front surface thereof. Thesemiconductor elements may be, for example, a memory cell array and aperipheral circuit (CMOS circuit) around the memory cell array. Thememory cell array may be a three-dimensional memory cell array on whicha plurality of memory cells are arranged three-dimensionally.Furthermore, the semiconductor chip 31 is adhesively bonded onto thesemiconductor chip 30 via the adhesive layer 41. The semiconductor chip32 is adhesively bonded onto the semiconductor chip 31 via the adhesivelayer 42. The semiconductor chip 33 is adhesively bonded onto thesemiconductor chip 32 via the adhesive layer 43. The semiconductor chips31 to 33 are each, for example, a memory chip including a NAND flashmemory similarly to, for example, the semiconductor chip 30. Thesemiconductor chips 30 to may be identical memory chips. In FIG. 1, thesemiconductor chips 30 to 33 are stacked as four memory chips above thesemiconductor chip 20 serving as the controller chip. Nevertheless, thenumber of stacked layers of the semiconductor chips may be equal to orsmaller than 3 or may be equal to or greater than 5.

The semiconductor chip 30 is larger than the semiconductor chip 20, andan outer edge of the semiconductor chip 30 is on outside of an outeredge of the semiconductor chip 20 when viewed above. The spacer chips 50are provided between the semiconductor chip 30 and the solder resistlayer 14 of the interconnection board 10 around the semiconductor chip20. The spacer chips 50 are adhesively bonded onto the solder resistlayer 14 via the adhesive layers 60. Furthermore, the adhesive layer 40is adhesively bonded onto upper surfaces of the spacer chips 50, and thesemiconductor chip 30 is adhesively bonded onto the upper surfaces ofthe spacer chips 50 via the adhesive layer 40.

The bonding wire 90 connects pads of the interconnection board 10 andthe semiconductor chips 30 to 33. For connecting the semiconductor chips30 to 33 by the bonding wire 90, the semiconductor chips 30 to 33 arestacked and arranged staggered (offset) from each other by the size ofthe pad. It is noted that the semiconductor chip 20 is not connected tothe bonding wire 90 by wire bonding since the semiconductor chip 20 isflip-chip bonded by the electrode pillars 21. Nevertheless, in otherexamples, the semiconductor chip 20 may be not only flip-chip bonded bythe electrode pillars 21 but also wire bonded.

The encapsulation resin 91 encapsulates the semiconductor chips 20 and30 to 33, the spacer chips 50, the resin layer 80, the bonding wire 90,and the like. In the semiconductor device 1, the plurality ofsemiconductor chips 20 and 30 to 33 thereby form one semiconductorpackage on the interconnection board 10.

FIG. 2 is an enlarged cross-sectional view of a frame B1 shown inFIG. 1. FIG. 3 is a plan view showing a positional relationship amongthe solder resist layer 14, the opening OP, the interconnection layer11, and the electrode pillar 21. The openings OP are provided in thesolder resist layer 14, and part of the interconnection layer 11 isexposed in each opening OP. The metal material 70 is filled in theopening OP and is in contact with the part of the interconnection layer11. Each electrode pillar 21 is inserted into the metal material 70 andelectrically connected to the interconnection layer 11 via the metalmaterial 70.

A lower end portion 21 b of each electrode pillar 21 is inserted intoeach opening OP. Therefore, a height H21 of the lower end portion 21 bof the electrode pillar 21 from the upper surface 15 a of the insulatinglayer 15 is smaller than a height H14 of an upper surface 14 a of thesolder resist layer 14 from the upper surface 15 a. The electrode pillar21 is thereby brought into contact with and inserted into the liquid orpaste metal material 70 filled in the opening OP. The metal material 70is brought up from the lower end portion 21 b of the electrode pillar 21along a side surface thereof, and tapered obliquely upward from an upperend of the opening OP to the side surface of the electrode pillar 21. Inthis way, the metal material 70 bulges from the opening OP along theside surface of the electrode pillar 21. The metal material 70 bulgesfrom the opening OP along the side surface of the electrode pillar 21 byas much as a volume equal to or greater than a volume of the electrodepillar 21 inserted into the opening OP. The bulge of the metal material70 from the opening OP in such a manner as to be in contact with theside surface of the electrode pillar 21 enables a reduction in a contactresistance between the metal material 70 and the electrode pillar 21.

In FIG. 2, the height H21 of the lower end portion 21 b of the electrodepillar 21 is smaller than the height H14 of the solder resist layer 14and greater than a height H11 of an upper surface 11 a of theinterconnection layer 11. However, the height H21 of the lower endportion 21 b of the electrode pillar 21 may be smaller than the heightH11 of the upper surface 11 a of the interconnection layer 11.Furthermore, the lower end portion 21 b of the electrode pillar 21 maybe in contact with the upper surface 15 a of the insulating layer 15 ofthe interconnection board 10. Since the interconnection layer 11 is notprovided immediately under the electrode pillar 21, the lower endportion 21 b of the electrode pillar 21 can contact the upper surface 15a of the insulating layer 15. That is, the height H21 of the lower endportion 21 b may be set equal to a height of the upper surface 15 a ofthe insulating layer 15. In this way, the lower end portion 21 b of theelectrode pillar 21 may be located at any position lower than the heightH14 of the solder resist layer 14. As the lower end portion 21 b of theelectrode pillar 21 is closer to the upper surface 15 a of theinsulating layer 15, the semiconductor chip 20 can be made closer to theinterconnection board 10, and the package of the semiconductor device 1can be made thinner. Therefore, the lower end portion 21 b of theelectrode pillar 21 is preferably closer to the upper surface 15 a ofthe insulating layer 15.

Moreover, the interconnection layer 11 is not present immediately undereach electrode pillar 21. As shown in FIG. 3, in a view from a mountingdirection of the semiconductor chip 20 (that is, from above in the Zdirection of FIG. 2), the electrode pillar 21 is apart from theinterconnection layer 11, and the metal material 70 (as “conductivematerial”) is interposed between the electrode pillar 21 and theinterconnection layer 11.

In the view from the mounting direction, part of the interconnectionlayer 11 projects from a side surface of each opening OP toward acentral portion thereof. This increases a contact area between theinterconnection layer and the metal material 70 and reduces the contactresistance between the interconnection layer 11 and the metal material70.

For example, the liquid or paste metal material 70, such as solderpaste, copper or silver paste, or copper or silver nano ink, is filledinto each opening OP in advance, and each electrode pillar 21 of thesemiconductor chip 20 is inserted (or immersed) into the metal material70 within the opening OP. It is thereby possible to prevent generationof voids within the opening OP and prevent poor contact between theelectrode pillar 21 and the interconnection layer 11.

Furthermore, in a planar layout, each electrode pillar does not overlapthe interconnection layer 11 and is apart from the interconnection layer11. That is, in the planar layout, the electrode pillar 21 does notinterfere with the interconnection layer 11. It is thereby possible toset the height H21 of the lower end portion 21 b of the electrode pillar21 to be smaller than the height H11 of the upper surface 11 a of theinterconnection layer 11. Furthermore, the lower end portion 21 b of theelectrode pillar 21 may reach the upper surface 15 a of the insulatinglayer 15. By making the lower end portion 21 b of the electrode pillar21 closer to the upper surface 15 a of the insulating layer 15, it ispossible to make thinner the package of the semiconductor device 1.

A method of manufacturing the semiconductor device 1 will next bedescribed.

FIGS. 4 to 15 show an example of the semiconductor device manufacturingmethod. First, semiconductor elements are formed on a semiconductorwafer W. FIG. 4 is a perspective view of the semiconductor wafer W onwhich the semiconductor elements are formed. The semiconductor elementsare formed on the semiconductor wafer W and covered with polyimide PI.The semiconductor wafer W includes a plurality of semiconductor chips 20(or 30 to 33) to be diced in a dicing process to be described later.

Next, as shown in FIG. 5, a protective tape TP1 is attached onto thepolyimide PI. Next, as shown in FIG. 6, a rear surface of thesemiconductor wafer W is polished by a grinder G with the protectivetape TP1 placed below.

After peeling off the protective tape TP1, as shown in FIG. 7, the rearsurface of the semiconductor wafer W is attached to a flexible resintape TP2 stretched within a wafer ring WR. Next, as shown in FIG. 8, alaser beam is radiated from a laser oscillator LG along dicing lines onthe front surface or rear surface of the semiconductor wafer W. Groovesare thereby formed along the dicing lines.

Next, as shown in FIG. 9, the semiconductor wafer W is cut by a dicingblade DB along the grooves in the dicing lines. The semiconductor waferW is thereby diced into the semiconductor chips 20 (or 30 to 33). Thediced semiconductor chips 20 (or 30 to 33) are each picked up from theresin tape TP2 to be mounted on the interconnection board 10.

On the other hand, the insulating layer 15, the interconnection layers11, the through vias 12, and the solder resist layers 14 are formed onthe interconnection board 10. Next, using a mask material M1 formed onone solder resist layer 14, the openings OP are formed in the solderresist layer 14. At this time, each opening OP is formed in such amanner as to expose the interconnection layer 11 and the insulatinglayer 15 around the interconnection layer 11.

Next, although not shown, a flux is applied to remove an oxide film on afront surface of the interconnection layer 11 exposed in each openingOP. Next, a heat treatment is performed on the interconnection board 10to subject the interconnection board 10 to a plasma treatment. Next, asshown in FIG. 10, the liquid or paste metal material 70 is supplied tothe front surface of the interconnection board and each opening OP. Theinterconnection layer 11 exposed in the opening OP is covered with theliquid or paste metal material 70.

Next, as shown in FIG. 11, a squeegee-like tool 100 is used to scrape afront surface of the mask material M1 on the interconnection board 10.The tool 100 may be, for example, a plate-like scraper formed from aresin, a metal, or the like. By causing the tool 100 to scrape along theinterconnection board 10 in an A1 direction, excessive liquid or pastemetal material 70 can be removed from the interconnection board 10 whilefilling the metal material into each opening OP, as shown in FIG. 12.The A1 direction is generally parallel to the front surface of theinterconnection board 10. That is, the squeegee-like tool 100 leaves themetal material 70 within the opening OP but wipes off the excessivemetal material 70 from the interconnection board 10 to remove the metalmaterial 70 from the interconnection board 10 while scraping theinterconnection board 10 in the A1 direction. As shown in FIG. 13, themetal material 70 is thereby filled/pushed into the opening OP. Themetal material 70 hardly remains on the mask material M1. Furthermore,even when the metal material 70 remains on the mask material M1, themetal material 70 can be removed from the solder resist layer 14 byremoving the mask material M1. It is noted that the metal material 70may be subjected to reflow to fill the metal material 70 into theopening OP more reliably.

Next, each semiconductor chip 20 formed in the process shown in FIG. 9is picked up and each electrode pillar 21 of the semiconductor chip 20is inserted into the metal material 70 within each opening OP, as shownin FIG. 14. At this time, when coming into contact with the lower endportion 21 b of the electrode pillar 21, the liquid or paste metalmaterial 70 is brought up from the lower end portion 21 b along the sidesurface of the electrode pillar 21. Therefore, the metal material 70 isformed to be tapered obliquely upward from an upper end of the openingOP to the side surface of the electrode pillar 21. The metal material 70thereby bulges from the opening OP along the side surface of theelectrode pillar 21. The metal material 70 bulges from the opening OPalong the side surface of the electrode pillar 21 by as much as thevolume equal to or greater than the volume of the electrode pillar 21inserted into the opening OP. The bulge of the metal material 70 fromthe opening OP in such a manner as to be in contact with the sidesurface of the electrode pillar 21 enables the reduction in the contactresistance between the metal material 70 and the electrode pillar 21.

It is noted that the lower end portion 21 b of the electrode pillar 21may be located at any position lower than the upper surface 14 a of thesolder resist layer 14. That is, the lower end portion 21 b of theelectrode pillar 21 may be inserted to be lower than the upper surface11 a of the interconnection layer 11, or inserted only down to aposition higher than the upper surface 11 a of the interconnection layer11. This is because the electrode pillar 21 can be electricallyconnected to the interconnection layer 11 via the metal material 70without direct contact with the interconnection layer 11.

Furthermore, as described with reference to FIG. 3, the interconnectionlayer 11 is not present immediately under each electrode pillar 21.Therefore, in the view from the mounting direction of the semiconductorchip 20, each electrode pillar 21 is apart from the interconnectionlayer 11, and the metal material 70 is interposed between the electrodepillar 21 and the interconnection layer 11. In this way, even withoutthe interconnection layer 11 provided immediately under the electrodepillar 21, the electrode pillar 21 can be electrically connected to theinterconnection layer 11 via the metal material 70.

The lower end portion 21 b of the electrode pillar 21 may be in contactwith the upper surface 15 a of the insulating layer 15. Thesemiconductor chip 20 can be thereby made closer to the interconnectionboard 10, so that the package of the semiconductor device 1 can be madethinner.

Next, the interconnection board 10 is baked to volatilize a solvent ofthe liquid or paste metal material 70. Each electrode pillar 21 isconnected to the metal material 70 by metallic diffusion. When baking isover, the metal material 70 is more cured than that before baking. Aposition of the semiconductor chip 20 with respect to theinterconnection board 10 is thereby nearly fixed.

Next, as shown in FIG. 15, the resin layer 80 is supplied to thesemiconductor chip 20. The resin layer 80 is, for example, an underfillmaterial. The resin layer 80 penetrates between the semiconductor chip20 and the interconnection board 10 and covers surroundings of the metalmaterial 70 and a side surface of the semiconductor chip 20.

Next, the spacer chips 50 are adhesively bonded onto the interconnectionboard 10 around the semiconductor chip 20 via the adhesive layers 60. Itis preferable that a height of an upper surface of each spacer chip 50is generally equal to a height of an upper surface of the semiconductorchip 20. This can improve flatness of the semiconductor chips 30 to 33to be stacked on the semiconductor chip 20.

Subsequently, as shown in FIG. 1, the semiconductor chip 30 having theadhesive layer 40 bonded onto a rear surface of the semiconductor chip30 is mounted onto the semiconductor chip 20, the semiconductor chip 31having the adhesive layer 41 bonded onto a rear surface of thesemiconductor chip 31 is mounted onto the semiconductor chip 30, thesemiconductor chip 32 having the adhesive layer 42 bonded onto a rearsurface of the semiconductor chip 32 is mounted onto the semiconductorchip 31, and the semiconductor chip 33 having the adhesive layer 43bonded onto a rear surface of the semiconductor chip 33 is mounted ontothe semiconductor chip 32.

Next, the bonding wire 90 is disposed to connect the pads of thesemiconductor chips 30 to 33 to the pads on the interconnection board10. Furthermore, the encapsulation resin 91 encapsulates thesemiconductor chips 20 and 30 to 33, the bonding wire 90, and the like,thus forming the structure shown in FIG. 1.

As described so far, the liquid or paste metal material (for example,solder paste) 70 is supplied onto the interconnection board 10 and thenwiped off by the tool 100. The metal material 70 is thereby filled intoeach opening OP. Each electrode pillar 21 of the semiconductor chip 20is then inserted into the metal material 70 within the opening OP.

When a solder bump is formed on each electrode pillar in advance andthis solder bump is connected to the interconnection board 10 byflip-chip bonding, the flip-chip bonding is performed while supplying aflux to the connection portion in order to remove an oxide film on afront surface of the bump. At this time, a flow of the flux causesgeneration of inclusion voids within each opening OP and around eachelectrode pillar 21.

By contrast, each electrode pillar 21 is inserted into the metalmaterial (e.g., solder) 70 that is filled into each opening OP inadvance. Owing to this, at a time of flip-chip bonding, the opening OPis already filled with the metal material 70 and voids are not formedwithin the opening OP or around the electrode pillar 21. Furthermore, itis unnecessary to attach the solder bump to the electrode pillar 21 inadvance and unnecessary to supply the flux at the time of flip-chipbonding. It is, therefore, possible to prevent the generation ofinclusion voids within the opening OP and around the electrode pillar21.

Second Embodiment

FIG. 16 is an enlarged cross-sectional view of an example ofconfigurations of the connection portion between the semiconductor chip20 and an interconnection board 10 according to a second embodiment.FIG. 17 is a plan view showing a positional relationship among thesolder resist layer 14, the opening OP, the interconnection layer 11,and the electrode pillar 21 according to the second embodiment. In thesecond embodiment, part of the interconnection layer 11 faces on aninner surface of each opening OP and exposed on the inner surface. Thatis, as shown in FIG. 16, the interconnection layer 11 does not projecttoward the opening OP and only faces on the opening OP. Even with such aconfiguration, the metal material 70 can similarly contact with theinterconnection layer 11 and electrically connect each electrode pillar21 to the interconnection layer 11.

Other configurations in the second embodiment may be similar to thecorresponding configurations in the first embodiment. The secondembodiment can, therefore, attain similar advantages to those of thefirst embodiment.

Third Embodiment

FIG. 18 is an enlarged cross-sectional view of the connection portionbetween the semiconductor chip 20 and the interconnection board 10according to a third embodiment. According to the third embodiment, theheight H21 of the lower end portion 21 b of each electrode pillar 21from the upper surface 15 of the insulating layer 15 is smaller than theheight H11 of the interconnection layer 11. This enables the metalmaterial 70 to contact with the side surface of the electrode pillar 21by a relatively large area. Therefore, the contact resistance betweenthe metal material 70 and the electrode pillar 21 can be furtherreduced. Other configurations in the third embodiment may be similar tothe corresponding configurations in the first embodiment. The thirdembodiment can thereby attain similar advantages to those of the firstembodiment. Furthermore, the third embodiment may be combined with thesecond embodiment.

Fourth Embodiment

FIG. 19 is an enlarged cross-sectional view of the connection portionbetween the semiconductor chip 20 and the interconnection board 10according to a fourth embodiment. According to the fourth embodiment,the lower end portion 21 b of each electrode pillar 21 is in contactwith the upper surface 15 a of the insulating layer (e.g., prepreg) 15.That is, the height H21 of the lower end portion 21 b is substantiallyequal to a height of the upper surface 15 a of the insulating layer 15of the interconnection board 10. This enables the metal material 70 tocontact with the side surface of the electrode pillar 21 by a largerarea. Therefore, the contact resistance between the metal material 70and the electrode pillar 21 can be further reduced. Other configurationsin the fourth embodiment may be similar to the correspondingconfigurations in the first embodiment. The fourth embodiment can,therefore, attain similar advantages to those of the first embodiment.Furthermore, the fourth embodiment may be combined with the secondembodiment.

Fifth Embodiment

In the first to fourth embodiments, the resin layer 80 is supplied afterconnection of the semiconductor chip 20 to the interconnection board 10,as shown in FIGS. 13 to 15. However, in a fifth embodiment, afterproviding the metal material 70 on the interconnection board 10, an NCP(Non-Conductive Paste) is supplied as the resin layer 80 to theinterconnection board 10. The semiconductor chip 20 and theinterconnection board 10 are then connected to each other by heating andpressing. At this time, the NCP between the interconnection board 10 andthe semiconductor chip 20 flows by heating and pressing and leaks frombetween the interconnection board 10 and the semiconductor chip 20. Theleaking NCP draws up along the side surface of the semiconductor chip20. In view of this, in the fifth embodiment, the semiconductor chip 20,the interconnection board 10, and the resin layer 80 are provided in amanner shown in FIG. 1.

Thus, it is possible to attain similar advantages to those of the firstto fourth embodiments.

Sixth Embodiment

In a sixth embodiment, a connection method using an NCF (Non-ConductiveFilm) as an alternative to the NCP is applied. The metal material 70 isprovided on the interconnection board 10. The NCF is provided, as theresin layer 80, on the surface of the semiconductor chip 20 on whicheach electrode pillar 21 is provided. The semiconductor chip 20 and theinterconnection board 10 are then connected to each other by heating andpressing. At this time, the NCF between the interconnection board 10 andthe semiconductor chip 20 flows by heating and pressing and leaks frombetween the interconnection board 10 and the semiconductor chip 20. Theleaking NCF material is drawn up along the side surface of thesemiconductor chip 20. Therefore, in the sixth embodiment, thesemiconductor chip 20, the interconnection board 10, and the resin layer80 are provided in the manner shown in FIG. 1.

Therefore, it is possible to attain similar advantages to those of thefirst to fifth embodiments.

Additional Example Embodiments

In the embodiments described above, the metal material 70 is providedwithin each opening OP of the interconnection board 10 by using thesqueegee-like tool 100. Alternatively, the metal material 70 may beprovided within the opening OP by various other methods including screenprinting, use of an automated dispenser, and inkjet method. Even inthese other cases, it is possible to attain similar advantages to thosein the embodiments described above.

In the embodiments described above, each electrode pillar 21 may beinserted into the metal material 70 within each opening OP while heatingthe semiconductor chip 20 or the interconnection board 10. Even in thiscase, it is possible to attain similar advantages to those in theembodiments described above.

In the embodiments described above, a conductive resin or the like (suchas, poly (3,4-ethylenedioxythiophene): poly(styrene sulfonate)(PEDOT:PSS)) may be used as an alternative to the metal material 70.Even in this case, it is possible to attain similar advantages to thosein the embodiments described above. Furthermore, any material may beused as an alternative to the metal material 70 as long as the materialis a conductive material.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the inventions.

What is claimed is:
 1. A semiconductor device, comprising: a substratethat includes: a first insulating layer, a conductive layer on the firstinsulating layer, a second insulating layer on the conductive layer, andan opening that passes through the conductive layer and the secondinsulating layer and in which part of the conductive layer is exposed; aconductive material that contacts at least the first insulating layerand the part of the conductive layer in the opening; and a semiconductorchip that has an electrode extending towards the first insulating layerwithin the opening and contacting the conductive material, wherein alower end of the electrode is closer to the first insulating layer thanan upper surface of the conductive layer.
 2. The semiconductor deviceaccording to claim 1, wherein the lower end of the electrode is spacedapart from the first insulating layer.
 3. The semiconductor deviceaccording to claim 2, wherein the conductive material is between thelower end of the electrode and the first insulating layer.
 4. Asemiconductor device, comprising: a substrate that includes: a firstinsulating layer, a conductive layer on the first insulating layer, asecond insulating layer on the conductive layer, and an opening thatpasses through the conductive layer and the second insulating layer andin which part of the conductive layer is exposed; a conductive materialthat contacts at least the first insulating layer and the part of theconductive layer in the opening; and a semiconductor chip that has anelectrode extending towards the first insulating layer within theopening and contacting the conductive material, wherein an upper surfaceof the conductive layer is closer to the first insulating layer than alower end of the electrode.
 5. The semiconductor device according toclaim 1, wherein the part of the conductive layer projects from an innersurface of the opening that passes through the second insulating layertoward a center of the opening.
 6. The semiconductor device accordingclaim 1, wherein the part of the conductive layer forms part of an innersurface of the opening.
 7. The semiconductor device according to claim1, wherein the conductive material is further provided along a sidesurface of the electrode above the opening.
 8. The semiconductor deviceaccording to claim 7, wherein a volume of the conductive material abovethe opening is greater than or equal to a volume of the electrode in theopening.
 9. A semiconductor device, comprising: a substrate thatincludes: a first insulating layer, a conductive layer on the firstinsulating layer, a second insulating layer on the conductive layer, andan opening that passes through the conductive layer and the secondinsulating layer and in which part of the conductive layer is exposed; aconductive material that contacts at least the first insulating layerand the part of the conductive layer in the opening; and a semiconductorchip that has an electrode extending towards the first insulating layerwithin the opening and contacting the conductive material, wherein theelectrode contacts the first insulating layer.
 10. The semiconductordevice according to claim 4, wherein the lower end of the electrode isspaced apart from the first insulating layer.
 11. The semiconductordevice according to claim 10, wherein the conductive material is betweenthe lower end of the electrode and the first insulating layer.
 12. Thesemiconductor device according to claim 4, wherein the part of theconductive layer projects from an inner surface of the opening thatpasses through the second insulating layer toward a center of theopening.
 13. The semiconductor device according claim 4, wherein thepart of the conductive layer forms part of an inner surface of theopening.
 14. The semiconductor device according to claim 4, wherein theconductive material is further provided along a side surface of theelectrode above the opening.
 15. The semiconductor device according toclaim 14, wherein a volume of the conductive material above the openingis greater than or equal to a volume of the electrode in the opening.16. The semiconductor device according to claim 9, wherein the part ofthe conductive layer projects from an inner surface of the opening thatpasses through the second insulating layer toward a center of theopening.
 17. The semiconductor device according claim 9, wherein thepart of the conductive layer forms part of an inner surface of theopening.
 18. The semiconductor device according to claim 9, wherein theconductive material is further provided along a side surface of theelectrode above the opening.
 19. The semiconductor device according toclaim 18, wherein a volume of the conductive material above the openingis greater than or equal to a volume of the electrode in the opening.